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The development of microelectronics and photonics is directly limited by the technological capabilities of the preparation of special materials, usually of high purity and preparation of highly complex structures and components in discrete or integrated form. Semiconducting materials technology and structures and the possibility of the implementation and use of new physical principles play a vital role. The aim of the subject is to familiarize students with the basic technological procedures for the preparation of important semiconductor materials and structures. Attention is focused on the production of single crystal materials, especially silicon, and substances such AIIIBV as input materials of microelectronic and photonic devices and integrated structures. The principles of other processes such as epitaxial and diffusion of technology, vacuum evaporation and sputtering, chemical methods of thin film deposition and lithographic processes for preparation of circuits with high density of integration are also explained.
Last update: TAJ126 (28.11.2013)
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Students will be able to: Demonstrate their knowledge in the field of crystal growth and nucleation theory. Describe and divide primary methods of growth of single crystals and thin films. Know the methods of preparation of basic semiconductor and thin film structures (cathodic sputtering, vacuum deposition, diffusion, and other chemical processes, lithography, etching procedures, etc.). Know the preparation of the final semiconductor and photonic devices and will have an overview of their applications. Know the procedures for the preparation of special thin film nanostructures. Last update: TAJ126 (28.11.2013)
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R: Hüttel I. Technology of materials for electronics and optoelectronics, Institute of Chemical Technology Prague, 2000, ISBN: 80-7080-387-8 Last update: TAJ126 (23.09.2013)
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Written exam Last update: Slepička Petr (31.08.2013)
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1. The structure of semiconducting materials. 2. Crystal growth, classification of phase interfaces. 3. Crystallization, nucleation theory. 4. Transport phenomena at the interface 5. Production of single crystal by Czochralski and Bridgman method. 6. Epitaxy from the liquid phase, principle, device, characteristics of structures. 7. Epitaxy from the gaseous phase, principle, device, characteristics of structures. 8. Molecular beam epitaxy, principle, device, characteristics of structures. 9. Diffusion of impurities, ion implantation, device, production of PN junction. 10. Vacuum evaporation, principle, device, characteristics of structures. 11. Vacuum sputtering, principle, device, characteristics of structures. 12. The technology of microelectronic structures. 13. The technology of semiconductor sources of radiation for optoelectronics. 14. Integration of electronic and optoelectronic structures. Last update: Slepička Petr (31.08.2013)
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http://www.rcptm.com/cs/publikace/nejvyznamejsi-publikace/ Last update: Slepička Petr (31.08.2013)
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Physics I, Mathematics I Last update: Slepička Petr (31.08.2013)
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| Teaching methods | ||||
| Activity | Credits | Hours | ||
| Konzultace s vyučujícími | 1 | 28 | ||
| Účast na přednáškách | 1 | 28 | ||
| Příprava na přednášky, semináře, laboratoře, exkurzi nebo praxi | 0.5 | 14 | ||
| Příprava na zkoušku a její absolvování | 0.5 | 14 | ||
| 3 / 3 | 84 / 84 | |||
| Coursework assessment | |
| Form | Significance |
| Report from individual projects | 10 |
| Examination test | 90 |