SubjectsSubjects(version: 928)
Course, academic year 2019/2020
Materials Diagnostics - N126006
Title: Diagnostika materiálů
Guaranteed by: Department of Solid State Engineering (126)
Faculty: Faculty of Chemical Technology
Actual: from 2013 to 2020
Semester: winter
Points: winter s.:3
E-Credits: winter s.:3
Examination process: winter s.:
Hours per week, examination: winter s.:2/0, Ex [HT]
Capacity: 18 / unknown (unknown)
Min. number of students: unlimited
Language: Czech
Teaching methods: full-time
For type:  
Guarantor: Náhlík Josef Ing. CSc.
Examination dates   Schedule   
Annotation -
Last update: TAJ126 (28.11.2013)
The course is aimed at clarifying the fundamental nature electrophysical properties of materials with special emphasis on semiconductors. In the context of semiconductors, the conditions extrapolation of information given to conductors and insulators or dielectrics are briefly commented on. Gradually, there is defined a series of basic characteristic parameters of the material in stationary and non-stationary state, their physical nature, significance and practical methodology of the survey. Emphasis is placed on deduction of initial assumptions and discuss of their degree of compliance conditional measurement parameters of "acceptable" error. Discussed are also accompanying parasitic effects and methods to minimize their impact on the result.
Aim of the course -
Last update: Náhlík Josef Ing. CSc. (28.08.2013)

Students will be able to:

1. To characterize the theoretical basis of basic electrophysical parameters of the materials used in electronics, particularly semiconductors, both in stationary and non-stationary state,

2. Select the appropriate measurement methodology selected static and dynamic parameters of semiconductors in typical configurations of practice,

3. Formulate assumptions correct measurement of selected parameters and to assess the consequences of non-compliance with the required accuracy of measurement

4. Take into account the risk parasitic effects and to assess the extent of their influence on the measurement results

5. Methodology for measuring parameters of semiconductor reasonably extrapolated to the conductors and insulators

Literature -
Last update: Náhlík Josef Ing. CSc. (29.08.2013)

R: Náhlík J.: Diagnostika materiálů. Skriptum VŠCHT Praha. 1990

R: Frank H.: Fyzika a technika polovodičů. SNTL, Praha 1990

A: Koblížek V.: Měření základních vlastností elektrotechnických materiálů. Skriptum FEL ČVUT Praha, Praha 1979,

A: Frank H., Šnejdar V.: Principy a vlastosti polovodičových součástek. SNTL, Praha 1976.

A: Runyan W. R.: Semiconductor measurements and Instrumentation. Springer; New York, Berlin 1975

Learning resources -
Last update: Náhlík Josef Ing. CSc. (28.08.2013)

Ongoing consultations individually agreed terms.

Requirements to the exam -
Last update: Náhlík Josef Ing. CSc. (28.08.2013)

The course is concluded with an oral exam with written preparation. The test takes the form of approximately one-hour discussion for at least three main themes, which determines the examiner. Assumed an overview of the delivered substance, the presentation of important assumptions and conclusions and inferences the connections within the meaning of lectures and practical demonstrations.

Syllabus -
Last update: Náhlík Josef Ing. CSc. (28.08.2013)

1. Conductors, semiconductors, insulators, dielectrics and magnetics interact with the electromagnetic field. Classification of basic parameters of semiconductors.

2. Type of semiconductors and methodology of the survey. Pitfalls conductivity methods.

3. Conductivity of the material and its physical nature. The concept of concentration and drift mobility of free charge carriers.

4. Volume, sheet and surface resistivity of the material. Definitions and mutual relations.

5. Methodological problems of measurement on semiconductors and their solutions. Requirements contacts according to their functions and methods of their implementation. The concept and methodology of preparation of ohmic contacts.

6. Measurement of materials resistivity of samples with regular geometry. The concept of a geometric factor.

7. Basic theory of resistivity measurements on a half-infinite volume sample and infinitesimal thin surface layer of infinite space.

8. Probes method of resistivity measurement on real samples of manufacturing experience; correction functions system, their practical significance and application with regard to the nature of the sample and the desired accuracy.

9. Spreading resistance and resistivity materials micro-inhomogenity, profiling the oblique cut. The principles of non-contact resistivity measurement methods in manufacturing operations.

10. Hall effect and the specifics of semiconductors. Relationship concentration of free charge carriers and dopant concentration.

11. Methodology Hall effect measurements on samples of regular geometry and van der Pauw method. Adverse effects during Hall measurements and minimization of their impact.

12. Non-equilibrium charge carriers in semiconductors; concept, the basic parameters of a model of individual behavior of non-equilibrium charge carriers.

13. Behavior of "package" of non-.equilibrium charge carriers in semiconductors in an electric field; am-bipolar mobility and am-bipolar diffusion coefficient.

14. Selected methods of measuring the parameters of non-equilibrium charge carriers.

Registration requirements -
Last update: Náhlík Josef Ing. CSc. (28.08.2013)


Fundamentals of Measurement Techniques

Teaching methods
Activity Credits Hours
Konzultace s vyučujícími 0.3 8
Účast na přednáškách 1 28
Příprava na zkoušku a její absolvování 1.7 48
3 / 3 84 / 84
Coursework assessment
Form Significance
Oral examination 100